RFD14N05LSM
Manufacturer:
On Semiconductor
Mfr.Part #:
RFD14N05LSM
Datasheet:
Description:
MOSFETs TO-252AA SMD/SMT N-Channel number of channels:1 48 W 50 V Continuous Drain Current (ID):14 A 40 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 50 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 2.39 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.2604 g |
| Number of Elements | 1 |
| Current Rating | 14 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 48 W |
| Power Dissipation | 48 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 670 pF |
| Continuous Drain Current (ID) | 14 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 50 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 42 ns |
| Element Configuration | Single |
| Rise Time | 24 ns |
| Dual Supply Voltage | 50 V |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 100 mΩ |
| Nominal Vgs | 2 V |
| Recovery Time | 125 ns |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 50 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
Stock: 4540
Distributors
pcbx
pcbxUnit Price$0.54459
Ext.Price$0.54459
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.54459 | $0.54459 |
| 10 | $0.50184 | $5.01840 |
| 25 | $0.36115 | $9.02875 |
| 50 | $0.25990 | $12.99500 |